收藏本站

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N055PUJ
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP110N055PUJ-E1B-AY
Note
LEAD PLATING
PACKING
PACKAGE
NP110N055PUJ-E2B-AY
Note
Pure Sn (Tin)
Tape 1000 p/reel
TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
? Super low on-state resistance
R DS(on) = 2.4 m Ω MAX. (V GS = 10 V, I D = 55 A)
? Low input capacitance
C iss = 9500 pF TYP.
? Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-263)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
55
± 20
± 110
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 440
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
288
1.8
175
? 55 to + 175
W
W
° C
° C
Single Avalanche Energy
Note2
E AS
435
mJ
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note3
Note3
I AR
E AR
66
435
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = 28 V, R G = 25 Ω , V GS = 20 → 0 V, L = 100 μ H
3. T ch ≤ 150 ° C, R G = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
0.52
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19731EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NP15P06SLG-E1-AY MOSFET P-CH -60V MP-3ZK/TO-252
NP160N04TUG-E1-AY MOSFET N-CH 40V 160A TO-263-7
NP161N04TUG-E1-AY MOSFET N-CH 40V 160A TO-263-7
NP180N04TUG-E1-AY MOSFET N-CH 40V 180A TO-263-7
NP22N055SLE-E1-AY MOSFET N-CH 55V 22A TO-252
NP32N055SHE-E1-AY MOSFET N-CH 55V 32A TO-252
NP32N055SLE-E1-AY MOSFET N-CH 55V 32A TO-252
NP34N055SHE-E1-AY MOSFET N-CH 55V 34A TO-252
相关代理商/技术参数
NP110N055PUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N055PUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 55V 110A TO-263
NP111-273K 制造商:YAMAICHI 功能描述: 制造商:Yamaichi Electronics 功能描述:
NP112 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, BR
NP112AL 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, AL
NP112BK 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, BK
NP112GY 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, GY
NP112I 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, IV